Applications of Crystalline Indium-Gallium-Zinc-Oxide Technology to LSI: Memory, Processor, Image Sensor, and Field Programmable Gate Array (Invited)

Yoshiyuki Kurokawa1,  Yuki Okamoto1,  Takashi Nakagawa1,  Takeshi Aoki1,  Masataka Ikeda1,  Munehiro Kozuma1,  Takeshi Osada1,  Takayuki Ikeda1,  Naoto Yamade1,  Yutaka Okazaki1,  Hidekazu Miyairi1,  Masahiro Fujita2,  Jun Koyama1,  Shunpei Yamazaki1
1Semiconductor Energy Laboratory Co., Ltd., 2VLSI Design and Education Center (VDEC), University of Tokyo


Crystalline In-Ga-Zn Oxide (IGZO) including c-axis aligned crystal (CAAC) enables FETs to show high reliability and extremely low off-state current. CAAC-IGZO technology is expected to grow to main technology of next-generation displays and already contributes to mass-production of liquid crystal displays. On the other hand, we have also focused on a feature, extremely low off-state current, of CAAC-IGZO FETs and realized application of the CAAC-IGZO technology to LSIs as advanced pioneering development. In particular, a success in development of a hybrid process of CMOS FETs and CAAC-IGZO FETs promotes our developments of novel memories, processors, image sensors, and recently, field programmable gate arrays (FPGA). This invited paper reviews application of the CAAC-IGZO technology to these LSIs.