Preliminary Program

A New 600V Partial SOI LDMOS with Step-doped Drift Region

Yue Hu¹, Hao Wang², Caixia Du², Yuzhun Du², Peigang Deng², Jin He², Lei Song³, Haiqin Zhou⁴, Yong Wu⁴
¹Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen-Hongkong Instiutuitions, Peking University Shenzhen Institute, P. R. China, ²Shenzhen SOC Key Laboratory, ³Shenzhen SuperD Co. Ltd., ⁴TIANMA MICRO-ELECTRONICS.CO.,LTD