We present the design and analysis of 22 nm deep submicron indium gallium nitride InGaN and silicon Si NMOS transistors. The results show that the saturation and breakdown behavior of the InGaN transistor is significantly higher than that of its silicon Si counterpart. Our analysis suggests that InGaN could be a better alternative substrate material in the design and fabrication of transistors, as the size of the channel approaches the mean free path of the carriers.