NBTI Degradation with Optimized ID-VG Sweep for Wafer Fabrication Monitoring

Foo Yew Soon and Norhayati Soin

University of Malaya

Abstract

NBTI degradation mechanism is studied for 0.18µm pMOSFETs. Degradation on saturation and linear mode of operations are investigated respectively. To address the controlled delay in between stress cycles which account for the recovery effect, an optimized ID-VG sweep is devised in this work. The optimized ID-VG sweep is found to be able to reduce the recovery effect and it is easily to be implemented in typical DC parametric production tester in wafer fabrication manufacturing environment.