Uniform Diameter and Pitch Co-Design of 16nm N-type Carbon Nanotube Channel Arrays for VLSI

Yanan Sun and Volkan Kursun

The Hong Kong University of Science and Technology

Abstract

Uniform nanotube diameter and nanoarray pitch are essential for low-cost and high-yield manufacturability of billions of carbon nanotube MOSFETs (CN-MOSFETs) with various sizes on a single chip. In this paper, the optimum uniform diameter and pitch of 16nm n-type CN-MOSFETs with two different substrate bias voltages are determined for a wide range of transistor sizes. A new quality metric is evaluated to identify the optimum device profiles suitable for very large scale integration.