Chean Hung Lai and Wallace S.H Wong
Swinburne University of Technology (Sarawak Campus)
A temperature dependent actuation voltage has been proposed to minimize the dielectric charging effect in microelectromechanical system (MEMS) switch, leading to an improved switch lifetime. Mathematical models have been utilized to model the pull-in voltage variation throughout a range of thermal condition and simulate dielectric charging in the RF MEMS switch, enabling the analysis of charge built-up at the switch dielectric layer and substrate at different ambient temperature condition. The proposed temperature dependent actuation voltage has shown to reduce the dielectric charging effect of the RF MEMS switch as it minimize the applied actuation voltage to the MEMS switch during its long continuous operation.