Mehdi Saremi1, Behzad Ebrahimi1, Ali Afzali-Kusha1, Mohammad Saremi2
1School of Electrical and Computer Engineering of University of Tehran, 2Azad University of Khorram Abad
In this paper, at first we compared the characteristics of the three SOI structures in 32nm. Next, the variations of characteristics of these structures were compared. We observed that the DIBL decrease in GPS compared to GPB was more than the subthreshold swing increase of GPS compared to GPB. Therefore, the GPS structure is better than the GPB structure in sub-50nm technologies. Moreover, this structure is more resistant against channel length and thin-film thickness variations.