A Numerical Study of Silicon Opening Process

Benyamin Davaji,  Morteza Fathipour,  Mehdi Vadizadeh
Dept of Electrical and Computer Engineering, University of Tehran, Tehran, Iran


In this paper we review represent the operation of principles of silicon opening switch (SOS) process the utilizing realistic physical models provided by a commercial TCAD tool. We discuses qualitatively the difference between silicon opening process and conventional junction recovery mode. We show that p-n junction has no effect on current interruption.