A Novel 4H-SiC UMOSFET_ACCUFET with large Blocking Voltage

Negin Peyvast and Morteza Fathipour
Device and Process Modeling and Simulation Lab., School of Electrical and Computer Eng., University of Tehran, North Kargar Ave., Tehran, IRAN


In this paper, a new structure for a power UMOSFET_ACCUFET, based-on 4H-SiC, has been represented. We have demonstrated that by using vertical P and N pillars under the trench of a conventional UMOSFET, a superior characteristic for this device is achieved. The structure may be optimized by appropriate choice of N and P pillar’s doping concentrations as well as widths.